The Influence of Bath Temperature on the Properties of SILAR Deposited Cobalt Selenide Thin Films

被引:0
作者
Ho, Soon Min [1 ]
Anand, T. Joseph Sahaya [2 ]
机构
[1] INTI Int Univ, Ctr Amer Educ, Putra Nilai, Negeri Sembilan, Malaysia
[2] Univ Tekn Malaysia Melaka, Fac Mech & Mfg Engn Technol, Durian Tunggal, Malacca, Malaysia
关键词
thin films; cobalt selenide; semiconductor; band gap; solar cells; SILAR technique; TELLURIDE; GROWTH; CDS; FABRICATION;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, cobalt selenide thin films have been deposited onto glass slides with the SILAR method under various bath temperatures. The structure, optical properties, and morphology of thin films were investigated. The X-ray diffraction patterns confirmed that the number of peak intensities increased with increasing bath temperature. From the AFM images, bigger sizes and thicker films were observed for the films prepared at 80 degrees C. The average grain size was estimated to be 0.2 mu m, 0.15 mu m, and 0.25 mu m when the bath temperature was 40 degrees C, 50 degrees C, and 80 degrees C respectively. The highest absorbance value was observed for films prepared at 80 degrees C. The band gap values range from 2eV to 2.4 eV.
引用
收藏
页码:7393 / 7398
页数:6
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