Full-Swing Clock Generating Circuits on Plastic Using a-IGZO Dual-Gate TFTs With Pseudo-CMOS and Bootstrapping

被引：34

作者：

Chen, Yuanfeng ^{[1
]}

Geng, Di ^{[1
]}

Lin, Tengda ^{[1
]}

Mativenga, Mallory ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 07期

关键词：

a-IGZO; pseudo-CMOS; ring oscillator; TFT; THIN-FILM TRANSISTORS; OFFSET STRUCTURE;

D O I：

10.1109/LED.2016.2571321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As clock signals are usually supplied by external rigid ICs, they may limit mechanical flexibility of devices fabricated on plastic. Reported in this letter is a full-swing clock generating circuit that is integrated on a plastic substrate. The clock signal is generated by a 13-stages ring oscillator (RO), which is implemented by n-type-only dual-gate amorphousindium-gallium-zinc-oxide thin-film transistors. By combining bootstrapping and pseudo-CMOS inverting, an output peak-peak voltage (Vp-p) that reaches the supply voltage (V-DD) and a high speed, reaching an output frequency of 360 kHz, are achieved. In addition, a phase modulating capacitor is implemented in the RO to increase the high voltage level holding time and the addition of a buffer in the circuit is also studied for the achievement of two antiphase outputs.

引用

页码：882 / 885

页数：4

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