Resonant Photovoltaic Effect in Doped Magnetic Semiconductors

被引:41
作者
Bhalla, Pankaj [1 ,2 ,3 ]
MacDonald, Allan H. [4 ]
Culcer, Dimitrie [2 ,3 ]
机构
[1] Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China
[2] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
[3] Univ New South Wales Node, ARC Ctr Excellence Future Low Energy Elect Techno, Sydney, NSW 2052, Australia
[4] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
基金
澳大利亚研究理事会; 美国国家科学基金会;
关键词
SPIN; CURRENTS;
D O I
10.1103/PhysRevLett.124.087402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The rectified nonlinear response of a clean, time-reversal symmetric, undoped semiconductor to an ac electric field includes a well known intrinsic shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect, produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the resonant photovoltaic effect for a model of the surface states of a magnetized topological insulator.
引用
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页数:7
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