Resonant Photovoltaic Effect in Doped Magnetic Semiconductors

被引：41

作者：

Bhalla, Pankaj ^{[1
,2
,3
]}

MacDonald, Allan H. ^{[4
]}

Culcer, Dimitrie ^{[2
,3
]}

机构：

[1] Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China

[2] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia

[3] Univ New South Wales Node, ARC Ctr Excellence Future Low Energy Elect Techno, Sydney, NSW 2052, Australia

[4] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

来源：

PHYSICAL REVIEW LETTERS | 2020年 / 124卷 / 08期

基金：

美国国家科学基金会; 澳大利亚研究理事会;

关键词：

SPIN; CURRENTS;

D O I：

10.1103/PhysRevLett.124.087402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The rectified nonlinear response of a clean, time-reversal symmetric, undoped semiconductor to an ac electric field includes a well known intrinsic shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect, produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the resonant photovoltaic effect for a model of the surface states of a magnetized topological insulator.

引用

页数：7

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