An Improved Behavior Model for IGBT Modules Driven by Datasheet and Measurement

被引：21

作者：

Jing, Lei ^{[1
]}

Du, Mingxing ^{[2
]}

Wei, Kexin ^{[2
]}

Hurley, William Gerard ^{[3
]}

机构：

[1] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300071, Peoples R China

[2] Tianjin Univ Technol, Tianjin Key Lab Control Theory & Applicat Complic, Tianjin 300384, Peoples R China

[3] Natl Univ Ireland NUI Galway, Dept Elect Engn, Galway H91 TK33, Ireland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 01期

关键词：

Behavior model; double-pulse test; electromagnetic interference (EMI); IGBT module; MAST language; package parasitic parameters; SILICON-CARBIDE MOSFET; POWER; INDUCTANCES;

D O I：

10.1109/TED.2019.2954329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article describes an improved behavior model for IGBT modules. The new steady-state characteristic model of the IGBT with a correction function was built to improve the saturation current for different gate-emitter voltages. Two important nonlinear capacitances were described by two continuous functions to solve the convergence problem in the circuit simulation. The parasitic parameters generated by the package were extracted by the impedance measurement. All the parameters of the model are derived from datasheet and measurement. The improved model was implemented by MAST language in SABER circuit simulation. A double-pulse test was applied to verify the improved model. Compared with the conventional model for transient waveforms, switching losses, and electromagnetic interference (EMI), the improved model shows a better agreement with experiments. The satisfactory results indicate that the improved model can offer a simple, fast, and generic modeling approach.

引用

页码：230 / 236

页数：7

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