High-performance contacts in plastic transistors and logic gates that use printed electrodes of DNNSA-PANI doped with single-walled carbon nanotubes

被引:119
作者
Lefenfeld, M
Blanchet, G
Rogers, JA
机构
[1] Univ Illinois, Beckman Inst, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Beckman Inst, Dept Chem, Urbana, IL 61801 USA
[3] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
[4] DuPont Cent Res, Expt Stn, Wilmington, DE USA
关键词
D O I
10.1002/adma.200304841
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Printed composites of polyaniline and single-walled carbon nanotubes (see Figure) provide high-resolution source/drain electrodes for organic transistors and logic gates. The low contact resistances and other good electrical properties exhibited by these systems, together with the operational flexibility of the printing method used to fabricate them, may represent important steps toward realising flexible electronic devices.
引用
收藏
页码:1188 / +
页数:5
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