Control of the interchain π-π interaction and electron density distribution at the surface of conjugated poly(3-hexylthiophene) thin films

被引:89
作者
Hao, X. T.
Hosokai, T.
Mitsuo, N.
Kera, S.
Okudaira, K. K.
Mase, K.
Ueno, N.
机构
[1] Chiba Univ, Fac Engn, Chiba 2638522, Japan
[2] Chiba Univ, Grad Sch Sci & Technol, Chiba 2638522, Japan
[3] Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan
关键词
D O I
10.1021/jp0732209
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Interchain interaction, i.e., pi-pi stacking, can benefit the carrier transport in conjugated regio-regular poly-(3-hexylthiophene) (P3HT) thin films. However, the existence of the insulating side hexyl chains in the surface region may be detrimental to the charge transfer between the polymer backbone and overlayer molecules. The control of the molecular orientation in the surface region is expected to alter the distribution of the pi electror. density at the surface to solve such problems, which can be achieved by controlling the solvent removal. rate during solidification. The evidence that the pi-electron density distribution at the outermost surface can be controlled is demonstrated by the investigation using the powerful combination of near edge X-ray absorption fine structure spectroscopy, ultraviolet photoelectron spectroscopy, and the most surface-sensitive technique: Penning ionization electron spectroscopy. From the spectroscopic studies, it can be deduced that the slower removal rate of the solvent makes the polymer chains even at the surface have sufficient time to adopt a more nearly equilibrium structure with edge-on conformation. Thus, the side hexyl chains extend outside the surface, which buries the pi-electron density contributed from the polymer backbone. Contrarily, the quench of obtaining a thermo-equilibrium structure in the surface region due to the faster removal of the solvent residual can lead to the surface chain conformation without persisting to the strong bulk orientation preference. Therefore, the face-on conformation of the polymer chain at the surface of thin films coated with high spin coating speed facilitate the electron density of the polymer backbone exposed outside the surface. Finally, thickness dependence of the surface electronic structure of P3HT thin films is also discussed.
引用
收藏
页码:10365 / 10372
页数:8
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共 32 条
  • [1] DENSITY-FUNCTIONAL THERMOCHEMISTRY .3. THE ROLE OF EXACT EXCHANGE
    BECKE, AD
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (07) : 5648 - 5652
  • [2] Bernius MT, 2000, ADV MATER, V12, P1737, DOI 10.1002/1521-4095(200012)12:23<1737::AID-ADMA1737>3.0.CO
  • [3] 2-N
  • [4] CASCIO AJ, 2006, APPL PHYS LETT, V88
  • [5] Variations in semiconducting polymer microstructure and hole mobility with spin-coating speed
    DeLongchamp, DM
    Vogel, BM
    Jung, Y
    Gurau, MC
    Richter, CA
    Kirillov, OA
    Obrzut, J
    Fischer, DA
    Sambasivan, S
    Richter, LJ
    Lin, EK
    [J]. CHEMISTRY OF MATERIALS, 2005, 17 (23) : 5610 - 5612
  • [6] Nanorubbing of polythiophene surfaces
    Derue, G
    Coppée, S
    Gabriele, S
    Surin, M
    Geskin, V
    Monteverde, F
    Leclère, P
    Lazzaroni, R
    Damman, P
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (22) : 8018 - 8019
  • [7] Influence of alkyl chain substitution on sexithienyl-metal interface morphology and energetics
    Duhm, S.
    Glowatzki, H.
    Rabe, J. P.
    Koch, N.
    Johnson, R. L.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (20)
  • [8] The role of surface-induced ordering in the crystallisation of PET films
    Durell, M
    Macdonald, JE
    Trolley, D
    Wehrum, A
    Jukes, PC
    Jones, RAL
    Walker, CJ
    Brown, S
    [J]. EUROPHYSICS LETTERS, 2002, 58 (06): : 844 - 850
  • [9] Photohole screening effects in polythiophenes with pendant groups
    Feng, DQ
    Caruso, AN
    Schulz, DL
    Losovyj, YB
    Dowben, PA
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (34) : 16382 - 16389
  • [10] Electronic density tailing outside π-conjugated polymer surface
    Hao, X. T.
    Hosokai, T.
    Mitsuo, N.
    Kera, S.
    Mase, K.
    Okudaira, K. K.
    Ueno, N.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (18)