Highly Reliable Amorphous Silicon Gate Driver Using Stable Center-Offset Thin-Film Transistors

被引：48

作者：

Choi, Jae Won ^{[1
]}

Kim, Jae Ik ^{[1
]}

Kim, Se Hwan ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 09期

关键词：

Amorphous materials; integrated circuits; shift registers; thin-film transistors (TFTs); INSTABILITY MECHANISMS; DEPENDENCE; STABILITY; TIME;

D O I：

10.1109/TED.2010.2054453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a highly reliable hydrogenated amorphous silicon (a-Si:H) gate driver using center-offset thin-film transistors (TFTs). The a-Si:H TFTs with a center-offset structure are demonstrated to be highly reliable compared to a conventional a-Si:H TFT. The V-th shift of center-offset a-Si:H TFTs was found to be 35% less than that of the conventional a-Si:H TFT. Therefore, the center-offset a-Si:H TFTs are used as pull-down TFTs in the gate driver circuit. When the center-offset pull-down TFTs are used in the a-Si:H gate driver, the output off-state of the gate driver remains stable for periods longer than 3 x 10(8) s.

引用

页码：2330 / 2334

页数：5

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