High-power high-efficiency 660-nm laser diodes for DVD-R/RW

被引：46

作者：

Yagi, T ^{[1
]}

Nishiguchi, H ^{[1
]}

Yoshida, Y ^{[1
]}

Miyashita, M ^{[1
]}

Sasaki, M ^{[1
]}

Sakamoto, Y ^{[1
]}

Ono, KI ^{[1
]}

Mitsui, Y ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Itami, Hyogo 6648641, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2003年 / 9卷 / 05期

关键词：

AlGaInP high-power laser diodes; heat generation; kink mechanism; temperature characteristics;

D O I：

10.1109/JSTQE.2003.819514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A kink mechanism in 660-nm laser diodes (LDs) has been studied experimentally. The experiments revealed that the main origin of the kink is a refractive index change due to heat generation in the stripe portion, and the kink power can be increased by improving the temperature characteristics of the LD. A newly developed LD , based on this result, shows stable lateral mode operation up to 190 mW at 80 degreesC. This is the highest power recorded among narrow stripe LDs with a wavelength of 660 nm. This LD is suitable for the next generation of high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LDs.

引用

页码：1260 / 1264

页数：5