High-power high-efficiency 660-nm laser diodes for DVD-R/RW

被引:46
作者
Yagi, T [1 ]
Nishiguchi, H [1 ]
Yoshida, Y [1 ]
Miyashita, M [1 ]
Sasaki, M [1 ]
Sakamoto, Y [1 ]
Ono, KI [1 ]
Mitsui, Y [1 ]
机构
[1] Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Itami, Hyogo 6648641, Japan
关键词
AlGaInP high-power laser diodes; heat generation; kink mechanism; temperature characteristics;
D O I
10.1109/JSTQE.2003.819514
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A kink mechanism in 660-nm laser diodes (LDs) has been studied experimentally. The experiments revealed that the main origin of the kink is a refractive index change due to heat generation in the stripe portion, and the kink power can be increased by improving the temperature characteristics of the LD. A newly developed LD , based on this result, shows stable lateral mode operation up to 190 mW at 80 degreesC. This is the highest power recorded among narrow stripe LDs with a wavelength of 660 nm. This LD is suitable for the next generation of high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LDs.
引用
收藏
页码:1260 / 1264
页数:5
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