Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

被引：40

作者：

Nguyen, Minh D. ^{[1
,2
,3
]}

Houwman, Evert P. ^{[1
]}

Dekkers, Matthijn ^{[2
]}

Nguyen, Chi T. Q. ^{[3
,4
]}

Vu, Hung N. ^{[3
]}

Rijnders, Guus ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands

[2] Solmates BV, Drienerlolaan 5, NL-7522 NB Enschede, Netherlands

[3] Hanoi Univ Sci & Technol, Int Training Inst Mat Sci, Dai Co Viet 1, Hanoi 10000, Vietnam

[4] Vietnam Natl Univ Forestry, Hanoi 10000, Vietnam

来源：

APL MATERIALS | 2016年 / 4卷 / 08期

关键词：

CAPACITORS;

D O I：

10.1063/1.4961636

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pb0.9La0.1(Zr0.52Ti0.48)O-3 (PLZT) relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (U-reco) of 13.7 J/cm(3) together with a high energy efficiency (eta) of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48)O-3 ferroelectric thin films (Ureco = 9.2 J/cm(3) and eta = 56.4%) which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field. (C) 2016 Author(s).

引用

页数：8

共 15 条

[1] Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times [J].