A one-step method to synthesize CH3NH3PbI3:MoS2 nanohybrids for high-performance solution-processed photodetectors in the visible region

被引:18
作者
Chandrasekar, Perumal Veeramalai [1 ]
Yang, Shengyi [1 ,2 ]
Hu, Jinming [1 ]
Sulaman, Muhammad [1 ,3 ]
Saleem, Muhammad Imran [1 ]
Tang, Yi [3 ]
Jiang, Yurong [3 ]
Zou, Bingsuo [1 ]
机构
[1] Beijing Inst Technol, Sch Phys, Ctr Micronanotechnol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China
[2] Chinese Acad Sci, State Key Lab Transducer Technol, Beijing 100190, Peoples R China
[3] Beijing Inst Technol, Sch Opt & Photon, Beijing Key Lab Precis Optoelect Measurement Inst, Beijing 100081, Peoples R China
关键词
CH3NH3PbI3; perovskites; MoS2; nanosheets; solution-processed photodetector; dark current; PBSE QUANTUM DOTS; HYDROTHERMAL SYNTHESIS; MOS2; NANOSHEETS; PEROVSKITE; GROWTH; EFFICIENT;
D O I
10.1088/1361-6528/aaf608
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A facile method to synthesize a CH3NH3PbI3:MoS2 nanohybrid for high-performance solution-processed photodetectors is presented. The interfacial charge carriers transfer due to the existence of heterojunctions between the 2D MoS2 nanosheet and perovskite cuboids are utilized to enhance the device performance. The dark current of the photodiode Au/CH3NH3PbI3:MoS2/Au was suppressed and its photocurrent was enhanced when compared to a pristine perovskite nanocrystal device Au/CH3NH3PbI3/Au. The lowest dark current of 0.34 x 10(-9) A was observed from the photodiode Au/CH3NH3PbI3:MoS2/Au and the photoresponsivity and photosensitivity increased from 312 mA W-1 to 696 mA W-1 and from 9.02 to 87.47, respectively, showing an enhancement of 123.1% and 869.7%. Also, the rising time and falling time were reduced from 73 ms to 50 ms and 60 ms to 16 ms, respectively, when compared to those for the pristine perovskite nanocrystal-based photodiode Au/CH3NH3PbI/Au. Therefore, this method provides a simple and effective approach to synthesize 2D nanosheet blended organic-inorganic nanohybrids for application in optoelectronic devices.
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页数:8
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