Formation of surface structures on single-crystalline silicon under the action of nanosecond high-power ion beam pulses

被引：2

作者：

Kovivchak, V. S. ^{[1
]}

Panova, T. V.

Krivozubov, O. V.

Davletkil'deev, N. A.

机构：

[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Omsk Div, Omsk 644018, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2011年 / 37卷 / 12期

关键词：

Oxide Film; Technical Physic Letter; Native Oxide; Beam Current Density; Single Crystalline Silicon;

D O I：

10.1134/S1063785011120248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the formation of surface structures on single-crystalline silicon surface under the action of a nanosecond pulsed high-power proton-carbon ion beam. Morphological features of the structures that appear as a result of this processing are described and possible mechanisms of their formation are considered.

引用

页码：1183 / 1185

页数：3

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