Laser plasma CVD diamond reactor

被引:7
作者
Bolshakov, AP
Konov, VI
Prokhorov, AM
Uglov, SA
Dausinger, F
机构
[1] Russian Acad Sci, Inst Gen Phys, Ctr Nat Sci, Moscow 119991, Russia
[2] Univ Stuttgart, Inst Strahlwerkzeuge, D-70569 Stuttgart, Germany
关键词
chemical vapour deposition; diamond films; laser; plasma;
D O I
10.1016/S0925-9635(01)00408-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The results of multi-parametric investigations of laser plasmatron in application to CVD of diamond are presented. Different reaction chamber configurations were studied. CH4/H-2/Xe(Ar) and CH4/CO2/H-2/Ar gas mixtures at total pressure 1.0-4.5 atm were used. Both convection and directed gas flows with velocity up to 50 cm/s delivered reactants to the substrate surface. Diamond film deposition rates up to 40-50 mum/h were reached. CW CO2 laser beam power and intensity needed for a stationary plasma maintenance under various experimental conditions were found. Laser radiation absorption in plasma was measured. The possibility to combine laser plasma with an auxiliary electrical discharge is demonstrated. A comparison between laser and other plasma CVD techniques is made. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1559 / 1564
页数:6
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