Ultraviolet-laser-induced crystallization of sol-gel derived indium oxide films

被引：37

作者：

Imai, H

Tominaga, A

Hirashima, H

Toki, M

Aizawa, M

机构：

[1] Keio Univ, Fac Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 223, Japan

[2] Knasai Res Inst, Shimogyo Ku, Kyoto 600, Japan

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 1-3期

关键词：

sol-gel; indium oxide; ITO; crystallization; ultraviolet laser;

D O I：

10.1023/A:1008604213960

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Modification of sol-gel derived indium oxide thin films using ultraviolet lasers was investigated. Irradiation by an ArF excimer (6.4 eV) and the fourth harmonic generation of a Nd:YAG laser (4.7 eV) was found to be effective in crystallization with a loss of hydroxyl groups and a decrease in the sheet resistance of the sol-gel films. Transparent crystalline indium oxide films were successfully obtained by 6.4 eV laser irradiation at fluences below 20 mJ/(cm(2) . shot), whereas degradation of the films was induced by a relatively high-fluence beam.

引用

页码：991 / 994

页数：4

共 18 条

[1]

EXARHOS GJ, 1991, P SOC PHOTO-OPT INS, V1624, P444

[2]

HIRASHIMA H, 1994, MATER RES SOC SYMP P, V346, P183, DOI 10.1557/PROC-346-183

[3] Significant densification of sol-gel derived amorphous silica films by vacuum ultraviolet irradiation [J].