Analysis of the Excellent Memory Disturb Characteristics of a Hourglass-Shaped Filament in Al2O3/Cu-Based CBRAM Devices

被引：23

作者：

Belmonte, Attilio ^{[1
,2
]}

Celano, Umberto ^{[1
,2
]}

Redolfi, Augusto ^{[1
]}

Fantini, Andrea ^{[1
]}

Muller, Robert ^{[1
]}

Vandervorst, Wilfried ^{[1
,2
]}

Houssa, Michel ^{[1
,2
]}

Jurczak, Malgorzata

Goux, Ludovic ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Phys & Astron, B-3000 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 06期

关键词：

Charge-transfer reaction; conductive-atomic-force microscopy (C-AFM); conductive-bridging; conductive-bridging random access memory (CBRAM); constant voltage stress (CVS); ECM; memory disturb; quantum point contact (QPC); read endurance; voltage-time dilemma; NUCLEATION;

D O I：

10.1109/TED.2015.2423094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

All resistive switching memory devices face a critical voltage-time dilemma, as they require fast write at moderate voltage together with disturb immunity at lower (read) voltage. In this paper, excellent voltage-time characteristics are demonstrated on a 90-nm CMOS-friendly W/Al2O3/TiW/Cu conductive-bridging memory cell. The switching voltage was evaluated in the large write pulsewidth range between 10 ns and 10 s, from which a very low slope of similar to 75 mV/decade was extracted. These characteristics allow, on the one hand, a fast switching (10 ns) at <3 V, and, on the other hand, excellent voltage-disturb immunity extrapolated to +/- 0.5 V for 10 years. Both constant-voltage-stress and read-endurance tests supported these predictions. By means of conductive-atomic-force microscopy tomography, the hourglass shape of the Cu filament was evidenced. Both the more distributed electrical field induced by this shape along the filament and the analysis of a charge-transfer (redox) reaction as rate-limiting mechanism in the switching process are discussed as the origins of this excellent disturb immunity.

引用

页码：2007 / 2013

页数：7

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