Alumina deposited by metal-organic chemical vapour deposition process on NiCoCrAlYTa superalloy

被引：7
|
作者：
Vicente Mendoza, Melquisedec [1 ]
Serrano Perez, Edgar [2 ]
Juarez Lopez, Fernando [1 ]
机构：
[1] Inst Politecn Nacl, CIITEC, Mexico City 02250, DF, Mexico
[2] UNITEC Estado Mexico, Campus Atizapan, Mexico City 52970, DF, Mexico
来源：
MATERIALS LETTERS-X | 2022年 / 15卷
关键词：
MOCVD; Alumina; MCrAlYsuperalloy; LOW-TEMPERATURE; AL2O3;
D O I：
10.1016/j.mlblux.2022.100160
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Alumina deposit was produced by metalorganic chemical vapour deposition process on a NiCoCrAlY superalloy substrate. Low frequency injection in the range 5-10 Hz was used to feed the Aluminium Tri-isopropoxide precursor into a deposit chamber holding at 400 degrees C of temperature. Both scanning electron microscopy and X-ray diffraction analysis were accomplished to characterize the deposited alumina. Topographic images show an alumina deposit roughness of Ra 35 nm measured by atomic force microscopy. An X-photon spectroscopy analysis of the alumina deposit was performed to identify both Al species and chemical analysis. Thermogravimetric analysis was conducted to assess the effect of deposited alumina on the superalloy.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Effect of carrier gas on metal-organic chemical vapour deposition of aluminium from dimethylethylamine alane
    Jong-Ho Yun
    Shi-Woo Rhee
    Journal of Materials Science: Materials in Electronics, 1998, 9 (1) : 1 - 4
  • [42] Etch pits and threading dislocations in GaN films grown by metal-organic chemical vapour deposition
    Lu, M
    Chang, X
    Li, ZL
    Yang, ZJ
    Zhang, GY
    Zhang, B
    CHINESE PHYSICS LETTERS, 2003, 20 (03) : 398 - 400
  • [43] Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition
    Lu, Y.
    Buiu, O.
    Hall, S.
    Mitrovic, I. Z.
    Davey, W.
    Potter, R. J.
    Chalker, P. R.
    MICROELECTRONICS RELIABILITY, 2007, 47 (4-5) : 722 - 725
  • [44] Metal-organic chemical vapor deposition of ZnO
    Pan, M
    Fenwick, WE
    Strassburg, M
    Li, N
    Kang, H
    Kane, MH
    Asghar, A
    Gupta, S
    Varatharajan, R
    Nause, J
    El-Zein, N
    Fabiano, P
    Steiner, T
    Ferguson, I
    JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 688 - 693
  • [45] Metal-organic precursors and chemical vapor deposition
    Valade, L
    Teyssandier, F
    ACTUALITE CHIMIQUE, 1999, (02): : 14 - 21
  • [46] New metal-organic chemical vapor deposition process for selective copper metallization
    Norman, J.A.T.
    Muratore, B.A.
    Dyer, P.N.
    Roberts, D.A.
    Hochberg, A.K.
    Dubois, L.H.
    1600, (B17): : 1 - 3
  • [47] PREPARATION AND CHARACTERIZATION OF THIN-FILMS OF ALUMINA BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
    FOURNIER, J
    DESISTO, W
    BRUSASCO, R
    SOSNOWSKI, M
    KERSHAW, R
    BAGLIO, J
    DWIGHT, K
    WOLD, A
    MATERIALS RESEARCH BULLETIN, 1988, 23 (01) : 31 - 36
  • [48] Effects of Metal-Organic Chemical Vapour Deposition grown seed layer on the fabrication of well aligned ZnO nanorods by Chemical Bath Deposition
    Fragala, Maria Elena
    Aleeva, Yana
    Malandrino, Graziella
    THIN SOLID FILMS, 2011, 519 (22) : 7694 - 7701
  • [49] Photoluminescence and structure of ZnO films deposited on Si substrates by metal-organic chemical vapor deposition
    Fu, ZX
    Lin, BX
    Zu, J
    THIN SOLID FILMS, 2002, 402 (1-2) : 302 - 306
  • [50] Growth of AlN nanowires by metal organic chemical vapour deposition
    Cimalla, V
    Foerster, C
    Cengher, D
    Tonisch, K
    Ambacher, O
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07): : 1476 - 1480
12345