Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition

被引：53

作者：

Quesada-Gonzalez, Miguel ^{[1
,2
]}

Boscher, Nicolas D. ^{[2
]}

Carmalt, Claire J. ^{[1
]}

Parkin, Ivan P. ^{[1
]}

机构：

[1] UCL, Dept Chem, Mat Chem Res Ctr, 20 Gordon St, London WC1H 0AJ, England

[2] Luxembourg Inst Sci & Technol, Dept Mat Res & Technol, 5 Ave Hauts Fourneaux, L-4362 Esch Sur Alzette, Luxembourg

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 38期

关键词：

atmospheric pressure chemical vapor deposition (APCVD); interstitial boron-doped TiO2; enhancement of average crystal size; photoactive thin films; TITANIUM-DIOXIDE; VISIBLE-LIGHT; STEARIC-ACID; OXIDATION; RUTILE; GLASS;

D O I：

10.1021/acsami.6b09560

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.

引用

页码：25024 / 25029

页数：6

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