Thermal and electrical properties of Czochralski grown GeSi alloys

被引：3

作者：

Yonenaga, I ^{[1
]}

Goto, T ^{[1
]}

Li, J ^{[1
]}

Nonaka, M ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98 | 1998年

关键词：

D O I：

10.1109/ICT.1998.740404

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The thermoelectric parameters, the thermal conductivity, electrical conductivity and Seebeck coefficient were evaluated on high purity crystals of Ge1-xSix alloys in the whole composition 0 < x < 1 at elevated temperatures up to 800 degrees C. The thermal resistivity showed a maximum at x approximate to 0.5 due to the phonon scattering. The electrical conductivity decreased with increasing x, relating to the intrinsic carrier concentration determined by the band gap energy at high temperatures. The Seebeck coefficient was extremely low in the composition 0.1 < x < 0.5 due to the small difference of the electron and hole mobilities. The large magnitude of the Seebeck coefficient was obtained in the GeSi with x approximate to 0.8 at elevated temperatures.

引用

页码：402 / 405

页数：4