ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

被引：4

作者：

Zhou, J. C. ^{[1
]}

Li, L. ^{[1
]}

Rong, L. Y. ^{[1
]}

Zhao, B. X. ^{[1
]}

Chen, Y. M. ^{[1
]}

Li, F. ^{[1
]}

机构：

[1] Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2011年 / 25卷 / 20期

关键词：

RF magnetron sputtering; ZnO thin film; sputtering power; transparent conducting oxide thin film; TEMPERATURE;

D O I：

10.1142/S0217979211100357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400-900 nm between the sputtering power of 50-100 W. After the rapid thermal annealing at 550 degrees C for 300 s under N-2 ambient, the minimum resistivity reach to 10(-2)Omega center dot cm.

引用

页码：2741 / 2749

页数：9

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