Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering

被引：48

作者：

Buca, Dan ^{[1
,2
]}

Bjelajac, Andjelika ^{[3
]}

Spirito, Davide ^{[4
]}

Concepcion, Omar ^{[1
,2
]}

Gromovyi, Maksym ^{[3
]}

Sakat, Emilie ^{[3
]}

Lafosse, Xavier ^{[3
]}

Ferlazzo, Laurence ^{[3
]}

von den Driesch, Nils ^{[1
,2
]}

Ikonic, Zoran ^{[5
]}

Grutzmacher, Detlev ^{[1
,2
]}

Capellini, Giovanni ^{[4
,6
]}

El Kurdi, Moustafa ^{[3
]}

机构：

[1] Forschungszentrum Juelich, Inst Semicond Nanoelect, Peter Grunberg Inst 9 PGI 9, D-52428 Julich, Germany

[2] Forschungszentrum Juelich, JARA Fundamentals Future Informat Technol, D-52428 Julich, Germany

[3] Univ Paris Saclay, C2N, CNRS, 10 Blvd Thomas Gobert, F-91120 Palaiseau, France

[4] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[5] Univ Leeds, Sch Elect & Elect Engn, Pollard Inst, Leeds LS2 9JT, W Yorkshire, England

[6] Univ Roma Ire, Dipartimento Sci, Vle G Marconi 446, I-00146 Rome, Italy

来源：

ADVANCED OPTICAL MATERIALS | 2022年 / 10卷 / 22期

关键词：

GeSn band structure; GeSnOI; mid-infrared laser; room temperature GeSn laser; strain engineering; LASERS; SI; HETEROSTRUCTURE; DEFECT; DISK;

D O I：

10.1002/adom.202201024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The success of GeSn alloys as active material for infrared lasers could pave the way toward a monolithic technology that can be manufactured within mainstream silicon photonics. Nonetheless, for operation on chip, lasing should occur at room temperature or beyond. Unfortunately, despite the intense research in recent years, many hurdles have yet to be overcome. An approach exploiting strain engineering to induce large tensile strain in micro-disk made of GeSn alloy with Sn content of 14 at% is presented here. This method enables robust multimode laser emission at room temperature. Furthermore, tensile strain enables proper valence band engineering; as a result, over a large range of operating temperatures, lower lasing thresholds are observed compared to high Sn content GeSn lasers operating at similar wavelength.

引用

页数：9

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