Metamorphic GayIn1-yP/Ga1-xInxAs tandem solar cells for space and for terrestrial concentrator applications at C>1000 suns

被引:68
作者
Dimroth, F [1 ]
Beckert, R [1 ]
Meusel, M [1 ]
Schubert, U [1 ]
Bett, AW [1 ]
机构
[1] Fraunhofer Inst Solar Energy Syst, ISE, D-79100 Freiburg, Germany
来源
PROGRESS IN PHOTOVOLTAICS | 2001年 / 9卷 / 03期
关键词
D O I
10.1002/pip.362
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The use of Ga1-xInxAs instead of GaAs as a bottom solar cell in a GayIn1-yP/ Ga1-xInxAs tandem structure increases the flexibility of choosing the optimum bandgap combination of materials for a multijunction solar cell. Higher theoretical efficiencies are calculated and different cell concepts are suggested for space and terrestrial concentrator applications. Various GayIn1-yP/Ga1-xInxAs material combinations have been investigated for the first time and efficiencies up to 24.1% (AM0) and 27.0% (AM1.5 direct) have been reached under one-sun conditions. An efficiency of 30.0-31.3% was measured for a Ga0.35In0.65P/Ga0.83In0.17As tandem concentrator cell with prismatic cover at 300 suns. The top and bottom cell layers of this structure are grown lattice-matched to each other but a large mismatch is introduced at the interface to tire GaAs substrate. This cell structure is well suited for the use in next-generation terrestrial concentrators working at high concentration ratios. For the first time a cell efficiency up to 29-30% has been measured at concentration levels rep to 1300 suns, A small prototype concentrator with Fresnel lenses and four tandem solar cells working at C=120 has been constructed with art outdoor efficiency of 23%. Copyright (C) 2001 John Wiley & Sons, Ltd.
引用
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页码:165 / 178
页数:14
相关论文
共 26 条
[1]   Performance and parameter analysis of tandem solar cells using measurements at multiple spectral conditions [J].
Adelhelm, R ;
Bucher, K .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 50 (1-4) :185-195
[2]  
ANDREEV VM, 1998, P 2 WCPEC VIENN AUST, P3757
[3]  
[Anonymous], 2000, P 16 EUPVSEC GLASG M
[4]  
[Anonymous], P 22 IEEE PHOT SPEC
[5]  
[Anonymous], P 21 IEEE PHOT SPEC
[6]  
BETT AW, 2000, IN PRESS P 28 IEEE P
[7]  
BETT AW, 1998, P 2 WORLD C PHOT SOL, P268
[8]   High C-doping of MOVPE grown thin AlxGa1-xAs layers for AlGaAs/GaAs interband tunneling devices [J].
Dimroth, F ;
Schubert, U ;
Schienle, F ;
Bett, AW .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (01) :47-52
[9]   MOVPE grown Ga1-xInxAs solar cells for GaInP/GaInAs tandem applications [J].
Dimroth, F ;
Lanyi, P ;
Schubert, U ;
Bett, AW .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (01) :42-46
[10]  
DIMROTH F, 2000, P 28 IEEE PVSC ANCH