Dielectric and Ferroelectric Properties of Annealed B2O3 Doped Ba(Ti0.9Sn0.1)O3 Ceramics

In the present work, the posted sintered annealing method was applied for B2O3 doped Ba(Ti0.9Sn0.1)O-3 ceramics. The ceramics were fabricated via a solid state reaction method: sintered at 1350 degrees C for 24 h followed by annealing at 1100 degrees C for 4-32 h. Many electrical properties of the ceramics annealed at various annealing times were investigated with a variety of methods. Annealing for 4 h produced a sharper phase transition with high dielectric constant. The high dielectric constant of 27,000 was recorded at ferroelectric to paraelectric phase transition temperature of 38 degrees C. This sample also showed a high dielectric tunability of 70%. Ferroelectric performance of the sample was also improved. The improvements in electrical properties were related to the chemical homogeneity of the sample after annealing.