Evolution of electronic structure upon Cu doping in the topological insulator Bi2Se3

被引：37

作者：

Tanaka, Y. ^{[1
]}

Nakayama, K. ^{[1
]}

Souma, S. ^{[2
]}

Sato, T. ^{[1
]}

Xu, N. ^{[3
,4
]}

Zhang, P. ^{[3
,4
]}

Richard, P. ^{[3
,4
]}

Ding, H. ^{[3
,4
]}

Suzuki, Y. ^{[5
]}

Das, P. ^{[5
]}

Kadowaki, K. ^{[5
]}

Takahashi, T. ^{[1
,2
]}

机构：

[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Adv Inst Mat Res, WPI Res Ctr, Sendai, Miyagi 9808577, Japan

[3] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[4] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[5] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 12期

关键词：

SURFACE-STATES; SPIN;

D O I：

10.1103/PhysRevB.85.125111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed angle-resolved photoemission spectroscopy of CuxBi2Se3 as a function of Cu doping (x = 0.0-0.25) to investigate the doping-induced evolution of the electronic structure. We found that the topological surface state is preserved even in the heavy-doping region (x = 0.25), indicative of the robustness of the surface state against doping and impurities. The estimated carrier concentration is far smaller than that expected from a simple intercalation picture, and saturates at x similar to 0.1 where superconductivity emerges. This indicates that the carrier concentration responsible for superconductivity is dominated by a subtle balance between two competing processes of electron and hole doping.

引用

页数：5

共 23 条

[1] Reactive Chemical Doping of the Bi2Se3 Topological Insulator [J].