A new approach towards the growth of cadmium sulphide thin film by CBD method and its characterization

被引：76

作者：

Roy, P ^{[1
]}

Srivastava, SK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Chem, Inorgan Mat & Nanocomposite Lab, Kharagpur 721302, W Bengal, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2006年 / 95卷 / 2-3期

关键词：

cadmium sulphide thin film; chemical bath deposition; annealing; semiconducting; optical properties;

D O I：

10.1016/j.matchemphys.2005.06.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium sulphide thin films were deposited by the chemical bath deposition method using tartaric acid as a complexing agent and annealed at different temperature in nitrogen atmosphere and characterized. The crystallographic structure and the crystallite size were studied by the X-ray diffraction (XRD) pattern. Transmittance of the deposited film is significantly higher in the visible region. The optical band-gap of deposited film is 2.4 eV and it decreases with increase in annealing temperature. Temperature dependence of resistivity confirmed the semiconducting behaviour of the film. Scanning electron micrographs (SEM) showed the presence of grain particles of size < 1 mu m. X-ray photoelectron spectroscopy (XPS) studies supported the composition of cadmium sulphide thin film determined by EMPA and also indicated the presence of carbon and oxygen as impurity in the film. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：235 / 241

页数：7

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