High speed silicon Mach-Zehnder modulator based on interleaved PN junctions

被引：121

作者：

Xu, Hao ^{[1
]}

Xiao, Xi ^{[1
]}

Li, Xianyao ^{[1
]}

Hu, Yingtao ^{[1
]}

Li, Zhiyong ^{[1
]}

Chu, Tao ^{[1
]}

Yu, Yude ^{[1
]}

Yu, Jinzhong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 14期

基金：

中国国家自然科学基金;

关键词：

CARRIER-DEPLETION; OPTICAL MODULATORS; WAVE-GUIDES; TRANSMISSION;

D O I：

10.1364/OE.20.015093

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V pi L pi = 1.5 similar to 2.0 V.cm and low doping-induced loss of similar to 10 dB/cm by applying a relatively low doping concentration of 2 x 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 mu m. (c) 2012 Optical Society of America

引用

收藏

页码：15093 / 15099

页数：7

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