A Monolithic Integration of a Tunable MEMS Capacitor with GaN Technology

被引：0
作者：
Zine-El-Abidine, Imed [1 ]
Dietrich, James [2 ]
机构：
[1] CMC Microsyst, Micro Nanotechnol Fabricat, Kingston, ON, Canada
[2] Univ Manitoba, Winnipeg, MB R3T 2N2, Canada
来源：
2011 24TH CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (CCECE) | 2011年
关键词：
GaN; microelectromechanical systems; RF MEMS; tunable capacitor;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
This paper demonstrates a monolithic integration of MEMS tunable capacitor fabricated using CPFC GaN800 technology. The MEMS capacitor is based on a parallel-plate configuration with electrostatic actuation. A tuning range of 60% was achieved at 5 GHz and the resonant frequency was above 20 GHz.
引用
收藏
页码：447 / 449
页数：3
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