Visible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporation

被引：2

作者：

Son, JH

Kim, HB ^{[1
]}

Whang, CN

Sung, MC

Jeong, K

Im, S

Chae, KH

机构：

[1] Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120749, South Korea

[2] Yonsei Univ, Inst Appl Phys & Appl Phys, Seoul 120749, South Korea

[3] Korea Inst Sci & Technol, Div Mat Sci & Engn, Seoul 130165, South Korea

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 216卷

关键词：

ion-beam-mixing; annealing; photoluminescence; Si nanocrystal;

D O I：

10.1016/j.nimb.2003.11.059

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5 x 10(16) ions/cm(2) of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO2/Si (3 nm)/SiO2 layer will be discussed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：346 / 349

页数：4

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