A 200-V SOI p-Channel LDMOS with thick gate oxide layer

被引：0

作者：

Liang, Tao ^{[1
,2
]}

He, Yitao ^{[1
]}

Lu, Lu ^{[1
]}

Qiao, Ming ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China

[2] Changhong Elect Co Ltd, Mianyang, Peoples R China

来源：

7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年

关键词：

pLDMOS; SOI; multiple field plates; thick gate oxide; breakdown voltage; TECHNOLOGY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 200-V SOI p-channel pLDMOS with thick gate oxide layer is presented in this paper. The thick gate oxide layer is formed by field oxide process to endure the high voltage between the source and gate electrodes. The field implant (FI) technology is adopted to eliminate channel discontinuity at the bird's beak region. The influences of key parameters on on-state breakdown voltage (BV0N) and off-state breakdown voltage (BV0FF) of the SOI pLDMOS are discussed. The SOI pLDMOS with BV0FF of-240 V is experimentally realized, and is successfully applied to HV driving IC.

引用

页数：2

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