Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths

被引：46

作者：

Ahlbin, Jonathan R. ^{[1
]}

Gadlage, Matthew J. ^{[2
]}

Atkinson, Nicholas M. ^{[1
]}

Narasimham, Balaji ^{[3
]}

Bhuva, Bharat L. ^{[1
]}

Witulski, Arthur F. ^{[1
]}

Holman, W. Timothy ^{[1
]}

Eaton, Paul H. ^{[4
]}

Massengill, Lloyd W. ^{[1
]}

机构：

[1] Vanderbilt Univ, Nashville, TN 37235 USA

[2] NAVSEA Crane, Crane, IN 47522 USA

[3] Broadcom Corp, Irvine, CA 92617 USA

[4] Microelect Res & Dev Corp, Albuquerque, NM 87110 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2011年 / 11卷 / 03期

关键词：

Charge sharing; pulsewidth; radiation environment; single event; single-event transient (SET); soft error; PROPAGATION; WELL;

D O I：

10.1109/TDMR.2011.2157506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heavy-ion data from a 130-nm bulk CMOS process shows a counterproductive result in using a common single-event charge collection mitigation technique. Guard bands, which are well contacts that surround individual transistors, can reduce single-event pulsewidths for normal strikes, but increase them for angled strikes. Calibrated 3-D TCAD mixed-mode modeling has identified a multiple-transistor charge collection mechanism that explains the experimental data, namely that angled strikes result in charge collection in the normally ON device that increases the restoring current on the struck device.

引用

页码：401 / 406

页数：6

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