Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes

被引：15

作者：

Kang, He ^{[1
]}

Wang, Quan ^{[2
]}

Xiao, Hongling ^{[1
]}

Wang, Cuimei ^{[1
]}

Jiang, Lijuan ^{[1
]}

Feng, Chun ^{[1
]}

Chen, Hong ^{[1
]}

Yin, Haibo ^{[1
]}

Qu, Shenqi ^{[1
]}

Peng, Enchao ^{[1
]}

Gong, Jiamin ^{[2
]}

Wang, Xiaoliang ^{[1
,3
]}

Li, Baiquan ^{[4
]}

Wang, Zhanguo ^{[1
]}

Hou, Xun ^{[3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Xian Univ Posts & Telecommun, Sch Elect Engn, Xian, Peoples R China

[3] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China

[4] Beijing Huajin Chuangwei Technol Co Ltd, Beijing, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 05期

关键词：

AlGaN; GaN; nitride semiconductors; Schottky barriers; Schottky diodes; thin films; ELECTRON-MOBILITY TRANSISTORS; COLLAPSE; VOLTAGE;

D O I：

10.1002/pssa.201431719

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, AlGaN/GaN- and GaN/AlGaN/GaN-based Schottky barrier diodes (SBDs) were fabricated and studied for comparison. The recorded electrical characteristics of the devices show that the introduction of a GaN cap layer can evidently reduce the reverse leakage current and suppress the forward current decay of the devices. What is more important, the GaN/AlGaN/GaN-based SBDs are capable of greatly alleviating the unrecoverable degradation of the reverse characteristics, which was observed in the device without a GaN cap layer when the device was under long time reverse dc stress. Detailed analyses were discussed.

引用

页码：1158 / 1161

页数：4

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