Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) Transport

被引：1

作者：

Berckmans, Stephane ^{[1
]}

Auvray, Laurent ^{[1
]}

Ferro, Gabriel ^{[1
]}

Cauwet, Francois ^{[1
]}

Carole, Davy ^{[1
]}

Souliere, Veronique ^{[1
]}

Viala, Jean-Claude ^{[1
]}

Collard, Emmanuel ^{[2
]}

Quoirin, Jean-Baptiste ^{[2
]}

Brylinski, Christian ^{[1
]}

机构：

[1] Univ Lyon 1, CNRS, Lab Multimat & Interfaces, UMR 5615, 43 Bd 11 Nov 1918, F-69622 Villeurbanne, France

[2] STMicroelect, Maebashi, Gunma 3710036, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

3C-SiC; SiGe; VLS transport; Silicon; SI(100);

D O I：

10.4028/www.scientific.net/MSF.679-680.99

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is deposited on the substrate. Then the temperature of the sample is increased above Ge melting point in order to form a SiGe liquid phase by reaction with the substrate. Upon reaching the target temperature (1100-1300 degrees C) the VLS growth starts with the injection of propane in the reactor. Both Raman spectrometry and X-Ray diffraction analyses evidenced the formation of 3C-SiC on every sample. However, this SiC deposit, a few micrometers thick, is always found to be polycrystalline though textured. In parallel, the presence of an epitaxial Si-Ge alloy, whose composition depends on the growth temperature, was systematically detected between Si and SiC.

引用

页码：99 / +

页数：2

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