Measurements of CF2 radicals in CF4 and CF4/H2 electron cyclotron resonance plasmas

被引:0
|
作者
Choi, WS [1 ]
Yoo, YS
Park, CW
机构
[1] Pusan Womens Coll, Dept Ophthalm Opt, Pusan 614735, South Korea
[2] Korea Res Inst Stand & Sci, Laser Metrol Grp, Taejon 305600, South Korea
关键词
electron cyclotron resonance plasma; Cf-4;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The CF2 radical density in a CF4 electron cyclotron resonance plasma is measured in terms of the microwave power, the pressure, the flow rate, and the H-2 addition ratio by using mass spectroscopy and optical emission spectroscopy. In mass spectroscopy, the CF2 radical density is measured by correcting the ionization and the dissociation processes with the mass spectrometer, and the results are compared with those from optical emission spectroscopy. The number of CF2 radicals increases with increasing power and saturates above 600 W, which means that the power is moved to other radicals. The CF2 radical emission intensity increases with the CF4 gas pressure and has a peak at 0.7 mTorr. When H-2 is added to CF4 + H-2, the CF2 radical emission intensity has a peak at a H-2 to CF4 + H-2 mixing gas ratio of 50 %.
引用
收藏
页码:529 / 533
页数:5
相关论文
共 50 条
  • [1] Electron transport coefficients in mixtures of CF4 and CF2 radicals
    Nikitovic, Zeljka D.
    Stojanovic, Vladimir D.
    Booth, Jean Paul
    Petrovic, Zoran Lj
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2009, 18 (03):
  • [2] Surface production of CF, CF2, and C2 radicals in high-density CF4/H2 plasmas
    Sasaki, K
    Furukawa, H
    Kadota, K
    Suzuki, C
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) : 5585 - 5591
  • [3] MODELING OF SILICON ETCHING IN CF4/O2 AND CF4/H2 PLASMAS
    VENKATESAN, SP
    TRACHTENBERG, I
    EDGAR, TF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (07) : 2280 - 2290
  • [4] Loss processes of CF and CF2 radicals in the afterglow of high-density CF4 plasmas
    Suzuki, C
    Sasaki, K
    Kadota, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (6B): : L824 - L826
  • [5] Loss processes of CF and CF2 radicals in the afterglow of high-density CF4 plasmas
    Suzuki, Chihiro
    Sasaki, Koichi
    Kadota, Kiyoshi
    1997, JJAP, Minato-ku (36):
  • [6] Metastable CF and CF2 molecules in CF4 inductively-coupled plasmas
    Booth, JP
    Corr, C
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2006, 15 (01): : 112 - 116
  • [7] CF AND CF2 ACTINOMETRY IN A CF4/AR PLASMA
    KISS, LDB
    NICOLAI, JP
    CONNER, WT
    SAWIN, HH
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) : 3186 - 3192
  • [8] Lifetime measurements of CFx radicals and H atoms in afterglow of CF4/H2 plasmas
    Sasaki, K
    Usui, K
    Furukawa, H
    Suzuki, C
    Kadota, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9A): : 5047 - 5048
  • [9] Kinetics of radicals in CF4 and C4F8 electron cyclotron resonance plasmas
    Miyata, K
    Hori, M
    Goto, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (08): : 5340 - 5345
  • [10] CF2 production by CF4 electron impact dissociation in gas discharge
    Ivanov, VV
    Klopovskiy, KS
    Lopaev, DV
    Proshina, OV
    Rakhimov, AT
    Rakhimova, TV
    ADVANCED TECHNOLOGIES BASED ON WAVE AND BEAM GENERATED PLASMAS, 1999, 67 : 471 - 472