Memory and pressure studies in NaxCoO2 cobaltites

被引:0
作者
Garbarino, G. [1 ]
Regueiro, M. Nunez [2 ]
Bouvier, P. [1 ]
Crichton, W. A. [1 ]
Mezouar, M. [1 ]
Lejay, P. [2 ]
Armand, M. [3 ]
Foo, M. L. [4 ,5 ]
Cava, R. J. [4 ,5 ]
机构
[1] European Synchrotron Radiat Facil, Grenoble, France
[2] Inst Neel, MCBT, Grenoble, France
[3] Univ Picardie Jules Verne Amiens, LRCS, Amiens, France
[4] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
[5] Princeton Univ, Mat Inst, Princeton, NJ 08544 USA
来源
25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4: QUANTUM PHASE TRANSITIONS AND MAGNETISM | 2009年 / 150卷
关键词
D O I
10.1088/1742-6596/150/4/042039
中图分类号
O414.1 [热力学];
学科分类号
摘要
We present a detailed study on the memory effect results in Na0.5-delta CoO2 single crystals. We analyze the temperature dependence of the nonvolatile current-pulse-induced resistance memory state. These results allow us to have more insight in the mobility of Na+ ions induced by current and their effect on the memory effect. We also developed X-ray diffraction studies under pressure at ambient temperature in the Na0.5CoO2 powder compound. An orthorhombic to hexagonal phase transition was observed at 9GPa. This transition can be explained taking into account the Na ions displacement between two allowed positions. These structural results allow us to confirm that the non-volatile resistive commutation can be interpreted by the displacement of the Na ions induced by the current pulses.
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页数:4
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