Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy

被引：11

作者：

Furukawa, Naoki ^{[1
]}

Nishikawa, Atsushi ^{[1
]}

Kawasaki, Takashi ^{[1
]}

Terai, Yoshikazu ^{[1
]}

Fujiwara, Yasufumi ^{[1
]}

机构：

[1] Osaka Univ, Div Mat & Mfg Sci, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 02期

基金：

日本学术振兴会;

关键词：

Eu; GaN; growth pressure; OMVPE; photoluminescence; ELECTROLUMINESCENT DEVICES; EMISSION;

D O I：

10.1002/pssa.201000598

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the luminescence properties of the Eu-doped GaN (GaN:Eu) grown at atmospheric (100 kPa) and low (10 kPa) pressures by organometallic vapor phase epitaxy (OMVPE). Although Eu concentration of atmospheric pressure GaN: Eu (AP-GaN:Eu) is lower than that of low pressure GaN: Eu (LP-GaN:Eu), the integrated photoluminescence (PL) intensity of the AP-GaN: Eu was 10 times higher than that of the LP-GaN: Eu (A. Nishikawa et al., Appl. Phys. Lett. 97, 051113 (2010)). Temperature dependent PL and time-resolved PL measurements revealed that the improved PL intensity was attributed to the higher crystal quality of the AP-GaN:Eu compared to that of the LP-GaN:Eu, which resulted in the enhancement of the energy transfer efficiency from the GaN host material to the Eu ions and in the increase in the number of optically active Eu ions. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：445 / 448

页数：4

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