Wideband semiconductor optical amplifier steady-state numerical model

被引：279
|
作者：
Connelly, MJ [1 ]
机构：
[1] Univ Limerick, Dept Elect & Comp Engn, Limerick, Ireland
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 03期
关键词：
modeling; semiconductor optical amplifier;
D O I：
10.1109/3.910455
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes, The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.
引用
收藏
页码：439 / 447
页数：9
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