Wideband semiconductor optical amplifier steady-state numerical model

被引：279
|
作者：
Connelly, MJ [1 ]
机构：
[1] Univ Limerick, Dept Elect & Comp Engn, Limerick, Ireland
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 03期
关键词：
modeling; semiconductor optical amplifier;
D O I：
10.1109/3.910455
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes, The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.
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页码：439 / 447
页数：9
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