Low temperature characteristics of Pt/p-strained-Si Schottky diodes

被引：0

作者：

Chattopadhyay, S ^{[1
]}

Bera, LK ^{[1
]}

Ray, SK ^{[1
]}

Bose, PK ^{[1
]}

Maiti, CK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Schottky barrier height and ideality factor of Pt/p-strained-Si have been investigated st low temperature. Simulation based on drift-diffusion emission model has been used to explain the experimental results.

引用

页码：621 / 623

页数：3