Effect of duty cycle and frequency on the morphology of porous silicon formed by alternating square pulse anodic etching

被引：10

作者：

Escorcia, J. ^{[1
]}

Agarwal, V. ^{[1
]}

机构：

[1] UAEM, Ctr Invest Ingn & Ciencias Aplicadas, Ave Univ 1001, Morelos 62210, Mexico

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 6 | 2007年 / 4卷 / 06期

关键词：

D O I：

10.1002/pssc.200674361

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work we report the fabrication and characterization of porous silicon formed by alternating square pulse anodization. The effect of duty cycle (5-100%) and frequency was studied for porous silicon samples made with highly doped silicon wafers, under the same equivalent charge condition. The high resolution scanning electron microscopy images reveal that, under the same conditions of current and frequency, there exists an optimum value of duty cycle (20%), at which the structure exhibits superior characteristics. Maintaining the same charge supplied during the positive square pulse for the total anodization time, with a 10 mA/cm(2) current density and 5% duty cycle, samples were fabricated at different frequencies (from constant current to 100 Hz) and the etching rate/thickness of the PSL formed at a 10 Hz frequency is found to be maximum, indicating that the response of the electrochemical reaction is maximum at this frequency. However, a reduction in the interface roughness between porous silicon and crystalline Si is obtained only at high frequencies. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2039 / +

页数：2

共 7 条

[1] Tailoring the photonic band gap of a porous silicon dielectric mirror [J].

Agarwal, V ;

del Río, JA .

APPLIED PHYSICS LETTERS, 2003, 82 (10) :1512-1514

[2]

BEAL MIJ, 1987, J CRYST GROWTH, V73, P622

[3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[4]

Hou XY, 1996, APPL PHYS LETT, V68, P2323, DOI 10.1063/1.115845

[5] THE PHYSICS OF MACROPORE FORMATION IN LOW DOPED N-TYPE SILICON [J].

LEHMANN, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (10) :2836-2843

[6] A novel method of fabricating porous silicon material: ultrasonically enhanced anodic electrochemical etching [J].

Liu, Y ;

Xiong, ZH ;

Liu, Y ;

Xu, SH ;

Liu, XB ;

Ding, XM ;

Hou, XY .

SOLID STATE COMMUNICATIONS, 2003, 127 (08) :583-588

[7] Narrow-line light emission from porous silicon multilayers and microcavities [J].

Xu, SH ;

Xiong, ZH ;

Gu, LL ;

Liu, Y ;

Ding, XM ;

Zi, J ;

Hou, XY .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (09) :1004-1007

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