Temperature-compensated film bulk acoustic resonator above 2 GHz

被引：29

作者：

Pang, W ^{[1
]}

Yu, HY ^{[1
]}

Zhang, H ^{[1
]}

Kim, ES ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 06期

关键词：

air-gap capacitor; film bulk acoustic resonators (FBARs); surface micromaching; temperature compensation; XeF2;

D O I：

10.1109/LED.2005.848113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micromachined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/degrees C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO2 cantilever that is released by XeF2 vapor etching of silicon. The AI-ZnO-Al-SiO2 FBAR is measured to have a TCF of -0.45 ppm/degrees C (between 85 degrees C and 110 degrees C) at 4.4 GHz.

引用

页码：369 / 371

页数：3

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