High Power 980-nm Broad-Area Lasers with Distributed Bragg Reflection Grating

被引：0
|
作者：
Qiao, Chuang [1 ,2 ]
Fang, Dan [1 ]
Li [2 ]
Fang, Xuan [1 ,3 ,4 ]
Tang, Jilong [1 ]
Wang, Dengkui [1 ]
Zhang, Baoshun [2 ]
Wei, Zhipeng [1 ]
机构：
[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou, Jiangsu, Peoples R China
[3] Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen, Guangdong, Peoples R China
[4] Harbin Normal Univ, Sch Phys & Elect Engn, Key Lab Photon & Elect Bandgap Mat, Minist Educ, Harbin, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2021年 / 219卷 / 01期
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
Semiconductor lasers; distributed Bragg reflector; electron beam lithography; high power;
D O I：
10.1080/10584587.2021.1911373
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power and highly stable 980 nm semiconductor lasers are widely used in fiber laser pumping and instrumentation applications. We report on a distributed Bragg reflector (DBR) semiconductor laser manufactured on the waveguide structure of an asymmetric large optical cavity. Wavelength stabilization is achieved using a 500-mu m-long DBR with a sixth-order Bragg grating, which is fabricated using a combination of electron beam lithography and inductively coupled plasma etching. When the device injection current is 22 A, the output power ranges up to 16 W, the slope efficiency is 0.73 W/A, and a spectral linewidth of 1.4 nm is achieved.
引用
收藏
页码：260 / 267
页数：8
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