Terahertz imaging and spectroscopy of large-area single-layer graphene

被引:104
作者
Tomaino, J. L. [1 ]
Jameson, A. D. [1 ]
Kevek, J. W. [1 ]
Paul, M. J. [1 ]
van der Zande, A. M. [2 ]
Barton, R. A. [3 ]
McEuen, P. L. [2 ,4 ]
Minot, E. D. [1 ]
Lee, Yun-Shik [1 ]
机构
[1] Oregon State Univ, Dept Phys, Corvallis, OR 97331 USA
[2] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
[3] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[4] Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
来源
OPTICS EXPRESS | 2011年 / 19卷 / 01期
基金
美国国家科学基金会;
关键词
FILMS;
D O I
10.1364/OE.19.000141
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate terahertz (THz) imaging and spectroscopy of a 15 x 15-mm(2) single-layer graphene film on Si using broadband THz pulses. The THz images clearly map out the THz carrier dynamics of the grapheneon-Si sample, allowing us to measure sheet conductivity with sub-mm resolution without fabricating electrodes. The THz carrier dynamics are dominated by intraband transitions and the THz-induced electron motion is characterized by a flat spectral response. A theoretical analysis based on the Fresnel coefficients for a metallic thin film shows that the local sheet conductivity varies across the sample from sigma(s) = 1.7 x 10(-3) to 2.4 x 10(-3) Omega(-1) (sheet resistance, rho(s) = 420 - 590 Omega/sq). (C)2010 Optical Society of America
引用
收藏
页码:141 / 146
页数:6
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