ON-WAFER DEEMBEEDDING TECHNIQUES WITH APPLICATION TO HEMT DEVICES CHARACTERIZATION

被引：0
|
作者：
Lu, Haiyan [1 ,2 ]
Wang, Weibo [1 ,2 ]
Zhou, Jianjun [1 ,2 ]
Chen, Tangshen [1 ,2 ]
Chen, Chen [2 ]
机构：
[1] Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China
[2] Nanjing Elect Device Inst Nanjing, Nanjing 210016, Jiangsu, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two different deem bedding methods, including open-short method and open-short-Ioad+c deembedding method are discussed in this paper. These deembedding techniques are used to remove all parasitic elements of the device. Comparisons between open-short-Ioad+c and open-short method were made using measured and simulated data on InP HEMT. The results indicate that better accuracy is achieved using open-short-Ioad+c method on high frequency.
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页数：3
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