Sol-Gel Synthesis of High-Quality SrRuO3 Thin-Film Electrodes Suppressing the Formation of Detrimental RuO2 and the Dielectric Properties of Integrated Lead Lanthanum Zirconate Titanate Films

被引:7
作者
Narayanan, Manoj [1 ]
Tong, Sheng [1 ]
Koritala, Rachel [2 ]
Ma, Beihai [1 ]
Pol, Vilas G. [3 ]
Balachandran, U. [1 ]
机构
[1] Argonne Natl Lab, Div Energy Syst, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[3] Argonne Natl Lab, Chem Sci & Engn Div, Argonne, IL 60439 USA
关键词
CHEMICAL SOLUTION DEPOSITION; ELECTRICAL-PROPERTIES; VAPOR-DEPOSITION; THERMAL-ANALYSIS; CAPACITORS; MICROSTRUCTURES; FABRICATION; SUBSTRATE; FATIGUE; SRTIO3;
D O I
10.1021/cm102136f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A facile solution chemistry is demonstrated to fabricate high-quality polycrystalline strontium ruthenium oxide (SrRuO3) thin film electrodes on silicon substrates suppressing the formation of undesired ruthenium oxide (RuO2) for the deposition of dielectric and ferroelectric materials like lead lanthanum zirconatc titanate (PLZT). The robust, highly crystalline SrRuO3 film fabrication process does not favor the formation of RuO2 because of molecular level modification of the precursors possessing analogous melting points, yielding homogeneous films. This chemistry is further understood and complemented by kinetic and thermodynamic analysis of the DTA data under non-isothermal conditions, with which the activation energies to form RuO2 and SrRuO3 were calculated to be 156 +/- 17 and 96 +/- 10 kJ/mol, respectively. The room-temperature resistivity of the SrRuO3 film was measured to be similar to 850 +/- 50 42 mu Omega cm on silicon (100) substrates. The dielectric properties of sol gel-derived PLZT thin film capacitors on polycrystalline SrRuO3 electrodes were also measured to illustrate the high quality of the formed SrRuO3 bottom electrode. These results have broad implications for the expanded use of these conductive oxide electrodes in many applications that require low thermal budgets. The PLZT (8/52/48) films exhibited well-defined hysteresis loops with remanent polarization of similar to 10.5 mu C/cm(2), dielectric constant of > 1450, dielectric loss of < 0.06, and leakage current density of similar to 3.8 x 10(-8) A/cm(2). These dielectric properties are similar to those of F'LZT on platinized silicon, indicating the high quality of the bottom conductive oxide layer. In addition, the PLZT capacitors were essentially fatigue free for > 1 x 10(9) cycles when deposited over an oxide electrode.
引用
收藏
页码:106 / 113
页数:8
相关论文
共 37 条
[1]   CONTRIBUTION OF ELECTRODES AND MICROSTRUCTURES TO THE ELECTRICAL-PROPERTIES OF PB(ZR0.53TI0.47)O-3 THIN-FILM CAPACITORS [J].
ALSHAREEF, HN ;
KINGON, AI ;
CHEN, X ;
BELLUR, KR ;
AUCIELLO, O .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (11) :2968-2975
[2]   ELECTRICAL-PROPERTIES OF FERROELECTRIC THIN-FILM CAPACITORS WITH HYBRID (PT,RUO2) ELECTRODES FOR NONVOLATILE MEMORY APPLICATIONS [J].
ALSHAREEF, HN ;
AUCIELLO, O ;
KINGON, AI .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :2146-2154
[3]   Thermodynamic properties of SrRuO3(s) [J].
Banerjee, A ;
Prasad, R ;
Venugopal, V .
JOURNAL OF ALLOYS AND COMPOUNDS, 2003, 353 (1-2) :263-268
[4]   FATIGUE OF FERROELECTRIC PBZRXTIYO3 CAPACITORS WITH RU AND RUOX ELECTRODES [J].
BERNSTEIN, SD ;
WONG, TY ;
KISLER, Y ;
TUSTISON, RW .
JOURNAL OF MATERIALS RESEARCH, 1993, 8 (01) :12-13
[5]   THE APPLICATION OF DIFFERENTIAL THERMAL ANALYSIS TO THE STUDY OF REACTION KINETICS [J].
BORCHARDT, HJ ;
DANIELS, F .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1957, 79 (01) :41-46
[6]   ELECTRICAL PROPERTIES OF CARUO3 AND SRRUO3 SINGLE-CRYSTALS [J].
BOUCHARD, RJ ;
GILLSON, JL .
MATERIALS RESEARCH BULLETIN, 1972, 7 (09) :873-&
[7]   Pyroelectric properties in sol-gel derived barium strontium titanate thin films using a highly diluted precursor solution [J].
Cheng, JG ;
Tang, J ;
Chu, JH ;
Zhang, AJ .
APPLIED PHYSICS LETTERS, 2000, 77 (07) :1035-1037
[8]   Microstructures and electrical properties of SrRuO3 thin films on LaAlO3 substrates [J].
Chu, F ;
Jia, QX ;
Landrum, G ;
Wu, XD ;
Hawley, M ;
Mitchell, TE .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (11) :1754-1759
[9]   Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics [J].
Damjanovic, D .
REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (09) :1267-1324
[10]   Physics of thin-film ferroelectric oxides [J].
Dawber, M ;
Rabe, KM ;
Scott, JF .
REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130