Photopeak detection by an InSb radiation detector made of liquid phase epitaxially grown crystals

被引：10

作者：

Sato, Yuki ^{[1
]}

Morita, Yasunari ^{[1
]}

Harai, Tomoyuki ^{[1
]}

Kanno, Ikuo ^{[1
]}

机构：

[1] Kyoto Univ, Grad Sch Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2010年 / 621卷 / 1-3期

关键词：

InSb; Radiation detector; Liquid phase epitaxy; SURFACE-MORPHOLOGY; SCHOTTKY;

D O I：

10.1016/j.nima.2010.05.004

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have fabricated a radiation detector using a p-type InSb crystal grown by liquid phase epitaxy (LPE). At temperatures below 100 K, the resistivity of the LPE crystal was over an order of magnitude higher than that of the commercial InSb crystal substrate. The resistance of the InSb detector is 680 k Omega at 4.2 K, which is one order of magnitude higher than that of detectors fabricated from commercial InSb wafers and, in an improvement over previous results, the energy resolution of Am-241 alpha particles reaches 3%. In addition, we also observe the photopeak of gamma-rays emitted by Ba-133. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：383 / 386

页数：4

共 16 条

[1] Alpha-particle response of an InSb radiation detector made of liquid-phase epitaxially-grown crystal
Sato, Yuki
Morita, Yasunari
Harai, Tomoyuki
Kanno, Ikuo
RADIATION MEASUREMENTS, 2011, 46 (12) : 1654 - 1657
[2] Carrier-loss temperature dependence in liquid-phase epitaxially grown InSb detectors
Sato, Yuki
Kanno, Ikuo
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2010, 624 (03) : 646 - 648
[3] Comparison of operation characteristic in radiation detectors made of InSb crystals grown by various methods
Sato Y.
Harai T.
Kanno I.
Green Energy and Technology, 2011, 66 : 278 - 285
[4] InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy
Yin, M.
Krier, A.
INFRARED PHYSICS & TECHNOLOGY, 2013, 58 : 47 - 50
[5] Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy
N. K. Udayashankar
H. L. Bhat
Bulletin of Materials Science, 2003, 26 : 685 - 692
[6] Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy
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Bhatt, HL
BULLETIN OF MATERIALS SCIENCE, 2003, 26 (07) : 685 - 692
[7] CHARACTERIZATION OF LIQUID-PHASE EPITAXIALLY GROWN HGCDTE FILMS BY MAGNETORESISTANCE MEASUREMENTS
KIM, JS
SEILER, DG
COLOMBO, L
CHEN, MC
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (09) : 1305 - 1310
[8] Radiation detector made of a diamond single crystal grown by a chemical vapor deposition method
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Tanaka, T
Imai, T
Tanimura, Y
Katagiri, M
Nishitani, T
Takeuchi, H
Sawamura, T
Iida, T
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 505 (1-2) : 187 - 190
[9] Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy
Sun, Changhong
Hu, Shuhong
Wang, Qiwei
Qiu, Feng
Lv, Yingfei
Deng, Huiyong
Sun, Yan
Dai, Ning
6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY, 2012, 8419
[10] Structural and electrical properties of liquid phase epitaxially grown Y1Ba2Cu3Ox films
Miura, S
Hashimoto, K
Wang, F
Enomoto, Y
Morishita, T
PHYSICA C, 1997, 278 (3-4): : 201 - 206

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