Design and efficiency enhancement of FTO/PC60BM/CsSn0.5Ge0.5I3/Spiro-OMeTAD/Au perovskite solar cell utilizing SCAPS-1D Simulator

The poisoning potential of lead, which is the main component of the absorber layer of lead halide (Pb) perovskites, as well as the stability problems of the manufactured devices, constitute a major obstacle to the industrialization of this technology. As a result, recent research is concentrating on lead-free metal halide perovskites. Unfortunately, current lead-free perovskites suffer from poor performance, hence the interest of our study. The research presented here shows that optimizing several variables related to the performance of each layer of a perovskite solar cell (PSC) constructed from lead-free inorganic materials provides an efficiency of 18.13%. We designed a structure with outstanding performance using the FTO/PC60BM/CsSn0.5Ge0.5I3/Spiro-OMeTAD/Au configuration. The impact of various relevant factors, such as the thickness and defect density of the absorber layer their doping densities, the back contact work, and the operating temperature, have been thoroughly investigated to boost the performance of the proposed device. The performance of cesium-tin-germanium triiodide (CsSn0.5Ge0.5I3) solar cells with different electron transport materials, including ZnO, TiO2, CdS, C-60; Cd0.5Zn0.5S, IGZO, has also been examined. It has been demonstrated that using ZnO as an electron transport layer improves electron extraction and, therefore, performance. The best outcomes are obtained after optimizing all the factors mentioned above, namely: Jsc of 28.70 mA/cm(2), Voc of 1.115 V, FF of 87.86%, and PCE of 18.13%. Additionally, the explored structure may be an excellent candidate for the future development of lead-free perovskite solar cells.