Large-scale synthesis of P-SiC/SiOx coaxial nanocables by chemical vapor reaction approach

被引:24
作者
Wang, C. S.
Zhang, J. L.
Meng, A. L.
Zhang, M.
Li, Z. J.
机构
[1] Qingdao Univ Sci & Technol, Coll Electromech Engn, Qingdao 266061, Shandong, Peoples R China
[2] Qingdao Univ Sci & Technol, Coll Chem & Mol Engn, Qingdao 266042, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
SiC; coaxial nanocables; chemical vapor reaction; SEM; TEM;
D O I
10.1016/j.physe.2007.02.002
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Large quantities of beta-SiC/SiOx coaxial nanocables have been synthesized with the presence of nickel catalyst by chemical vapor reaction using a mixture of milled Si and SiO2 powders and CH4 as the raw materials in a graphite reaction cell at relatively low temperature. Their microstructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersed X-ray (EDX) and X-ray diffraction (XRD). The synthesized beta-SiC/SiOx, coaxial nanocables possess a beta-SiC crystal core with a uniform diameter of 10-60 nm and an amorphous silicon oxide wrapping layer with tens of nanometers in thickness, and their lengths are up to several tens of micrometers. The vapor-liquid-solid (VLS) mechanism was proposed to elucidate the growth process of beta-SiC/SiOx coaxial nanocables. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:128 / 132
页数:5
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