Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors

被引：78

作者：

Ueno, K. ^{[1
]}

Shimotani, H. ^{[2
]}

Iwasa, Y. ^{[2
,3
]}

Kawasaki, M. ^{[1
,3
,4
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res AIMR, Sendai, Miyagi 9808577, Japan

[2] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 25期

关键词：

carrier density; doping; electrochemistry; electron mobility; strontium compounds; transistors; MOBILITY; SUPERCONDUCTIVITY; TITANATE; TIO2;

D O I：

10.1063/1.3457785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, n(S), of 10(14) cm(-2), the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. n(S) reached 10(15) cm(-2) at 5 V, and the electron mobility at 2 K was as large as 10(4) cm(2)/V s. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457785]

引用

页数：3

共 18 条

[1] High mobility in LaAlO3/SrTiO3 heterostructures:: Origin, dimensionality, and perspectives [J].

Herranz, G. ;

Basletic, M. ;

Bibes, M. ;

Carretero, C. ;

Tafra, E. ;

Jacquet, E. ;

Bouzehouane, K. ;

Deranlot, C. ;

Hamzic, A. ;

Broto, J.-M. ;

Barthelemy, A. ;

Fert, A. .

PHYSICAL REVIEW LETTERS, 2007, 98 (21)

[2] Principles and applications of electrochemical capacitors [J].

Kötz, R ;

Carlen, M .

ELECTROCHIMICA ACTA, 2000, 45 (15-16) :2483-2498

[3]

Krüger M, 2001, APPL PHYS LETT, V78, P1291, DOI 10.1063/1.1350427

[4] Microfluidic gating of an organic electrochemical transistor -: art. no. 013503 [J].

Mabeck, JT ;

DeFranco, JA ;

Bernards, DA ;

Malliaras, GG ;

Hocdé, S ;

Chase, CJ .

APPLIED PHYSICS LETTERS, 2005, 87 (01)

[5] A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface [J].

Ohtomo, A ;

Hwang, HY .

NATURE, 2004, 427 (6973) :423-426

[6] Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric [J].

Panzer, MJ ;

Newman, CR ;

Frisbie, CD .

APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3

[7] Direct comparison of field-effect and electrochemical doping in regioregular poly(3-hexylthiophene) [J].

Shimotani, H ;

Diguet, G ;

Iwasa, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (02) :022104-1

[8] Insulator-to-metal transition in ZnO by electric double layer gating [J].

Shimotani, Hidekazu ;

Asanuma, Haruhiko ;

Tsukazaki, Atsushi ;

Ohtomo, Akira ;

Kawasaki, Masashi ;

Iwasa, Yoshihiro .

APPLIED PHYSICS LETTERS, 2007, 91 (08)

[9] Electrolyte-gated charge accumulation in organic single crystals [J].

Shimotani, Hidekazu ;

Asanuma, Haruhiko ;

Takeya, Jun ;

Iwasa, Yoshihiro .

APPLIED PHYSICS LETTERS, 2006, 89 (20)

[10] Preparation of n-type YBa2Cu3Oy films by an electrochemical reaction method [J].

Tada, H. ;

Nojima, T. ;

Nakamura, S. ;

Shimotani, H. ;

Iwasa, Y. ;

Kobayashi, N. .

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PT 5A: SUPERCONDUCTIVITY, 2009, 150 (5a)

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