Substrate-induced enhancement of the chemical reactivity in metal-supported graphene

被引:11
作者
Romero-Muniz, Carlos [1 ]
Martin-Recio, Ana [2 ]
Pou, Pablo [1 ,3 ]
Gomez-Rodriguez, Jose M. [2 ,3 ,4 ]
Perez, Ruben [1 ,3 ]
机构
[1] Univ Autonoma Madrid, Dept Fis Teor Mat, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[3] Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain
[4] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain
关键词
EPITAXIAL GRAPHENE; DEPENDENCE; POINTS; STRAIN; ROUTE; GAS;
D O I
10.1039/c8cp02827c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Graphene is commonly regarded as an inert material. However, it is well known that the presence of defects or substitutional hetero-atoms confers graphene promising catalytic properties. In this work, we use first-principles calculations to show that it is also possible to enhance the chemical reactivity of a graphene layer by simply growing it on an appropriate substrate. Our comprehensive study demonstrates that, in strongly interacting substrates like Rh(111), graphene adopts highly rippled structures that exhibit areas with distinctive chemical behaviors. According to the local coupling with the substrate, we find areas with markedly different adsorption, dissociation and diffusion pathways for both molecular and atomic oxygen, including a significant change in the nature of the adsorbed molecular and dissociated states, and a dramatic reduction (similar to 60%) of the O-2 dissociation energy barrier with respect to free-standing graphene. Our results show that the graphene-metal interaction represents an additional and powerful handle to tailor the graphene chemical properties with potential applications to nano patterning, graphene functionalization and sensing devices.
引用
收藏
页码:19492 / 19499
页数:8
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