Copper oxide resistive switching memory for e-textile

被引：47

作者：

Han, Jin-Woo ^{[1
]}

Meyyappan, M. ^{[1
]}

机构：

[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA

来源：

AIP ADVANCES | 2011年 / 1卷 / 03期

关键词：

DEVICES;

D O I：

10.1063/1.3645967

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 10(2) between the high and low resistance states. The memory states are reversible and retained over 10(7) seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi: 10.1063/1.3645967]

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